Tomsk researchers have created next-level semiconductor devices
In a groundbreaking development, Russian Technological University MIREA has taken a significant step forward in the realm of space, nuclear, and industrial electronics with the creation of a 1 kV-class diode based on gallium oxide (GaO). This development, led by Yakovlev and Alexei Almayev, marks a significant milestone in the world of semiconductors [1].
The new diode, named "Power Diode 1 kV-class with Schottky Barrier", showcases an impressive breakdown voltage of over 1000 V, making it a potential game-changer in the field of high-voltage electronics [1]. The diode was tested at the laboratory of metal-oxide semiconductors of the centre, and the results have been promising [1].
Gallium oxide (GaO), an inorganic compound of gallium and oxygen, has been attracting attention due to its unique properties and potential applications. It exhibits semiconductor properties, making it suitable for various electronic devices [2].
GaO semiconductors are currently applied primarily in high-power, high-voltage electronic devices, with significant prospects in military, automotive, renewable energy, and telecommunications industries [4]. The advantages of GaO semiconductors include reduced energy losses, operation at higher voltages and temperatures, and higher frequency switching, making them ideal for compact, rugged power systems and efficiency-critical applications [1][2][4].
Active research on gallium oxide semiconductors is also ongoing in Russia, with the potential application areas of the new diodes being wide and including energy-efficient charging devices, high-power power supplies, electric motor control circuits in cars, and various electronics [1]. The developers of the diode are currently optimising the production process to make it more efficient and cost-effective [1].
While GaO semiconductors offer numerous benefits, they also present challenges. Material defects, doping limitations, long-term reliability concerns under extreme conditions, and thermal management issues due to GaO's relatively low thermal conductivity are some of the issues that need to be addressed [1]. Overcoming these will be critical to fully realising GaO's potential.
The market for GaO substrates is expected to grow rapidly, with forecasts projecting a compound annual growth rate (CAGR) of 17.5%, reaching over USD 168 million by 2034, driven by demand in power electronics, renewable energy sectors, electric vehicles (EVs), and telecom equipment [4]. Asia-Pacific, especially Japan, is a leader in commercial production and technology development for GaO [3][4].
Beyond power devices, GaO also shows promise in deep-ultraviolet (DUV) optoelectronics and radio-frequency (RF) electronics, expanding its application scope in specialized sensing, communication, and photonic devices [2].
In summary, GaO-based semiconductors are emerging as next-generation materials enabling highly efficient, high-voltage, and high-temperature power electronics with broad application potential across defense, automotive, renewable energy, and telecom industries, supported by strong market growth forecasts and ongoing technological advancements despite present materials and manufacturing challenges [1][2][4].
Interestingly, GaO semiconductors have smaller sizes compared to previous generations, making them more compact and suitable for miniaturised devices [1]. Moreover, they have high voltage stability and low energy consumption, further enhancing their appeal in various applications [1].
It's worth noting that China is currently leading in the development of gallium oxide semiconductors, with advances including heterostructure field-effect transistors (HFETs) that improve breakdown voltage and reduce on-resistance, enhancing the performance of GaO power semiconductors relative to existing materials like GaN and SiC [2].
As we look to the future, the potential of gallium oxide semiconductors is undeniable. They belong to the fourth generation of semiconductors, and their advancements are set to revolutionise the electronics industry, making it more efficient, sustainable, and versatile.
The development of the 1 kV-class diode, led by Yakovlev and Alexei Almayev at Russian Technological University MIREA, falls under the realm of science and technology, as it is a breakthrough in the world of semiconductors. This diode, made using gallium oxide, showcases its potential in the field of high-voltage electronics, being applied primarily in devices requiring high power and voltage, such as those found in military, automotive, renewable energy, and telecommunications industries.
