High-power density and efficiency advancements in GaN technology, setting sights on Space and Defense sectors as the prime targets for deployment.
Infineon Technologies, a leading provider of semiconductor solutions, is set to host a webinar focusing on the latest advancements in radiation-hardened Gallium Nitride (GaN) technology. The webinar, scheduled for September 17, 2025, will commence at 2:00 PM ET / 1:00 PM CT / 11:00 AM PT / 7:00 PM GMT, and will last for an hour.
The event will be spearheaded by two distinguished experts from Infineon's Aerospace and Defense division based in Andover and Leominster, Massachusetts. Sean DArcy, Sr. Marketing Director, brings over 30 years of experience in engineering, marketing, piloting, and program management, while Joe Dussi, Digital Marketing Manager, boasts over 25 years of marketing experience in the high technology industry with a focus on semiconductors.
The webinar will delve into the current trends and innovations in radiation-hardened GaN technology, which are revolutionizing power density, efficiency, and reliability for space and high-reliability applications such as satellites, space exploration, and defense systems. Key developments include the emergence of highly robust rad-hard GaN transistors, advanced packaging methods, vertically integrated manufacturing, and stringent adherence to space-grade certifications.
Infineon's latest contribution to this field is their new family of radiation-hardened GaN transistors, fabricated in-house using their CoolGan™ technology. These transistors are designed for harsh space environments, offering high resilience to Total Ionizing Dose (TID) and Single Event Effect (SEE) hardness. They are also DLA JANS-certified, marking an industry milestone as the first fully internally manufactured GaN devices to achieve this certification.
The webinar will also explore the integration of novel rad-hard materials, device designs, and testing techniques that reduce the risk of radiation-induced failures. This includes radiation-hardened-by-design approaches, the use of GaN-based High Electron Mobility Transistors (HEMTs) for high efficiency, and improvements in packaging to mitigate environmental stresses.
Furthermore, the discussion will highlight system-level solutions relying on rad-hard GaN in conjunction with radiation-tolerant analog-to-digital converters (ADCs) and error correction methods to handle radiation effects comprehensively.
The webinar promises to provide insights into the rapid evolution of rad-hard GaN technology as the next frontier for high-power density and energy-efficient electronics in space. This technology is enabling more compact, reliable, and high-performance power management systems suitable for extreme radiation conditions encountered beyond Earth’s atmosphere.
Don't miss this opportunity to learn from industry experts about the future of radiation-hardened GaN technology and its implications for space exploration, satellite communications, and defense systems. Register for the webinar today!
During the webinar, Infineon's experts will discuss ongoing science and technology advancements in radiation-hardened Gallium Nitride (GaN) technology, particularly within the space-and-astronomy industry. The experts will also touch upon industry trends related to rad-hard GaN technology, beyond Earth’s atmosphere applications, and the integration of novel materials, device designs, and testing techniques.
