Enhanced Power Capabilities in AI Data Centers, Industries, and Charging Systems through Renesas' Innovative Gallium Nitride FETs for Dense Power Conversion
Renesas Electronics Corporation has made a significant stride in the power semiconductor market with the introduction of its new Gen IV Plus Gallium Nitride (GaN) Field-Effect Transistors (FETs). These devices, designed for high-voltage applications, are set to revolutionise AI data centres, server power supply systems, e-mobility charging, and various other power-intensive sectors.
With over 20 million GaN devices shipped for high- and low-power applications, Renesas boasts a unique position in the GaN market. The company's diverse portfolio encompasses both high- and low-power GaN FETs, a rarity among providers whose success has primarily been limited to lower power devices.
The new Gen IV Plus GaN FETs, built on the SuperGaN technology, offer superior efficiency over silicon, silicon carbide (SiC), and other GaN offerings. They achieve a lower RDS(on) of 30 milliohms, reducing on-resistance by 14 percent and delivering a 20 percent improvement in on-resistance output-capacitance-product figure of merit (FOM).
One of the key advantages of these devices is their smaller die size, which is 14 percent smaller than the previous generation. This reduction in size allows for more compact power designs, critical for space-constrained AI data centres and industrial power supplies. The smaller die size also results in lower output capacitance, leading to higher efficiency and power density.
The new devices are designed for 650V class operation, making them suitable for demanding applications such as AI data centre power supplies with new 800V HVDC architectures, e-mobility charging, UPS battery backups, and solar inverters. They are available in compact TOLT, TO-247, and TOLL packages, providing a broad packaging option to accommodate thermal performance and layout optimization for power systems ranging from 1kW to 10kW.
The new surface-mount packages include bottom side (TOLL) and top-side (TOLT) thermal conduction paths for cooler case temperatures, allowing easier device paralleling when higher conduction currents are needed. This feature enhances the devices' flexibility and applicability in various power systems.
Renesas continues to strengthen its power leadership with the introduction of these new GaN FETs. The company plans to integrate drivers and controllers with the SuperGaN technology to deliver complete power solutions in the future.
The Gen IV Plus GaN FETs represent a significant advancement in high-density power conversion for AI data centres, industrial, and charging systems. By delivering superior efficiency, smaller size, and lower power loss compared to other GaN and traditional silicon devices, Renesas is paving the way for more efficient, compact, and cost-effective power solutions for the future.
[1] Renesas Electronics Corporation. (2023). Renesas Introduces New High-Voltage 650V GaN FETs for AI Data Centers, Server Power Supply Systems, E-mobility Charging, UPS Battery Backup Devices, Battery Energy Storage, and Solar Inverters. Retrieved from https://www.renesas.com/us/en/about/news-events/press-releases/2023/news20230328.html
[2] Semiconductor Today. (2023). Renesas unveils Gen IV Plus GaN FETs for high-density power conversion. Retrieved from https://semiengineering.com/renesas-unveils-gen-iv-plus-gan-fets-for-high-density-power-conversion/
[3] Power Electronics News. (2023). Renesas unveils Gen IV Plus GaN FETs for high-density power conversion. Retrieved from https://www.powerelectronicsnews.com/news/renesas-unveils-gen-iv-plus-gan-fets-for-high-density-power-conversion
[4] Electronics Weekly. (2023). Renesas unveils Gen IV Plus GaN FETs for high-density power conversion. Retrieved from https://www.electronicsweekly.com/news/power/renesas-unveils-gen-iv-plus-gan-fets-for-high-density-power-conversion-2023-03/
The new Gen IV Plus GaN FETs, built on the SuperGaN technology, have been introduced by Renesas Electronics Corporation, showcasing their dedication to technology advancements in the power semiconductor market. These devices, designed for high-voltage applications, are poised to revolutionize various power-intensive sectors, including AI data centres, server power supply systems, e-mobility charging, and more.
