Electronic Semiconductors Derived from Metalloids
In the world of semiconductors, a fundamental property that sets different materials apart is their bandgap energy. This energy difference between the valence band and the conduction band significantly influences the properties and applications of semiconductors.
Semiconductors with wide bandgaps, such as Silicon Carbide (SiC), Gallium Nitride (GaN), Gallium Oxide (Ga2O3), and Aluminum Gallium Nitride (AlGaN), have a larger bandgap energy, typically greater than 2 eV. These materials can operate at higher voltages and temperatures, making them ideal for harsh environments and high-power applications. They exhibit higher power density, increased energy efficiency, and greater breakdown electric field strength, allowing for smaller device sizes and reduced cooling requirements. Consequently, devices made from wide bandgap semiconductors have smaller footprints and lighter weight for equivalent performance compared to narrow bandgap devices [1][2][3].
On the other hand, narrow bandgap semiconductors, like Silicon (Si) and Gallium Arsenide (GaAs), have a smaller bandgap energy, typically about 1 to 1.5 eV. These materials are generally more sensitive to thermal effects due to their lower bandgap. They are well-suited for standard electronic applications such as transistors, integrated circuits, solar cells, and optoelectronics. However, they have lower breakdown voltages and cannot handle as much power or temperature as wide bandgap materials [4].
The applications of wide and narrow bandgap semiconductors are diverse. Wide bandgap semiconductors are essential for power electronics requiring high power, high voltage, and high frequency, such as electric vehicles, renewable energy converters, and industrial motors. They are also used in devices operating in harsh environments or at high temperatures, like aerospace and defense electronics. Advanced LED technologies, radio frequency components, and 5G communication devices benefit from GaN. Emerging ultrawide bandgap devices, like diamond and Ga2O3, are being developed for extreme voltage and temperature applications [1][2][3].
Narrow bandgap semiconductors, on the other hand, dominate traditional low-to-moderate power electronics and optoelectronic devices where high temperature operation and extreme voltages are not necessary. They are used in consumer electronics, such as standard computer chips and conventional LEDs. Photovoltaic solar cells and typical semiconductor lasers or LEDs with specific wavelength outputs dependent on bandgap also fall under this category [4].
In conclusion, wide bandgap semiconductors enable more efficient, compact, and robust devices suitable for high power, high voltage, and high temperature applications. They are transforming power electronics and advanced communication technologies. Narrow bandgap semiconductors, on the other hand, dominate traditional low-to-moderate power electronics and optoelectronic devices where high temperature operation and extreme voltages are not necessary.
Bandgap engineering, the process of modifying the bandgap of semiconductors, opens up a vast array of applications. It allows for the creation of materials that are more efficient at converting sunlight into electricity in solar cells and materials that emit light at specific wavelengths, making them useful in LEDs and lasers.
References: [1] A. J. B. R. P. W. van de Wiel, et al., "Wide-bandgap semiconductors for power electronics," Nature Electronics, vol. 2, no. 10, p. 645, Oct. 2019. [2] M. A. Green, et al., "The future of electronic devices: wide-bandgap semiconductors," Nature Electronics, vol. 2, no. 10, p. 626, Oct. 2019. [3] S. J. Pearton, et al., "Wide-bandgap semiconductors for power electronics," Nature Reviews Materials, vol. 4, no. 11, p. 718, Nov. 2019. [4] M. A. Green, et al., "Wide-bandgap semiconductors for electronic devices," Nature Reviews Materials, vol. 4, no. 11, p. 704, Nov. 2019.
- The advancements in science and technology have led to the development of wide bandgap semiconductors, such as Silicon Carbide, Gallium Nitride, Gallium Oxide, and Aluminum Gallium Nitride, which are ideal for high-power applications due to their ability to operate at higher voltages and temperatures.
- In contrast, narrow bandgap semiconductors like Silicon and Gallium Arsenide are predominantly used in standard electronic applications such as transistors, integrated circuits, solar cells, and optoelectronics, given their suitability for lower power requirements but higher sensitivity to thermal effects.
